sep.2000 ab f h v tab #110, t = 0.5 c l e a g n d u aa l b p g k j t r m m aa s x q x q xn z - m4 thd (7 typ.) y dia. (4 typ.) g u pe u pg v pe v pg w pe w p g u ne u ng v ne v ng w ne w n p p n n uvw p gup eup gun eun u gvp evp v gvn evn gwp ewp w gwn ewn p n n dimensions inches millimeters a 4.02 0.02 102.0 0.5 b 3.58 0.02 91.0 0.5 c 3.150 0.01 80.0 0.25 d 2.913 0.01 74.0 0.25 e 1.69 43.0 f 1.18 +0.06/-0.02 30 +1.5/-0.5 g 1.18 30.0 h 1.16 29.5 j 1.06 27.0 k 0.96 24.5 l 0.87 22.0 m 0.79 20.0 n 0.67 17.0 description: mitsubishi igbt modules are de- signed for use in switching appli- cations. each module consists of six igbts in a three phase bridge configuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM50TF-28H is a 1400v (v ces ), 50 ampere six-igbt module. type current rating v ces amperes volts (x 50) cm 50 28 dimensions inches millimeters p 0.65 16.5 q 0.55 14.0 r 0.47 12.0 s 0.43 11.0 t 0.39 10.0 u 0.33 8.5 v 0.32 8.1 x 0.24 6.0 y 0.22 dia. dia. 5.5 z m4 metric m4 aa 0.08 2.0 ab 0.28 7.0 mitsubishi igbt modules CM50TF-28H medium power switching use insulated type outline drawing and circuit diagram
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e-short) v ces 1400 volts gate-emitter voltage (c-e-short) v ges 20 volts collector current (t c = 25 c) i c 50 amperes peak collector current i cm 100* amperes emitter current** (t c = 25 c) i e 50 amperes peak emitter current** i em 100* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 400 watts mounting torque, m4 main terminal C 0.98 ~ 1.47 n m mounting torque, m5 mounting C 1.47 ~ 1.96 n m weight C 540 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms *pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 5ma, v ce = 10v 5.0 6.5 8.0 volts collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v C 3.1 4.2** volts i c = 50a, v ge = 15v, t j = 150 c C 2.95 C volts total gate charge q g v cc = 800v, i c = 50a, v ge = 15v C 255 C nc emitter-collector voltage v ec i e = 50a, v ge = 0v C C 3.8 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 10 nf output capacitance c oes v ge = 0v, v ce = 10v C C 3.5 nf reverse transfer capacitance c res C C 2 nf resistive turn-on delay time t d(on) C C 100 ns load rise time t r v cc = 800v, i c = 50a, C C 250 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 6.3 w C C 150 ns times fall time t f C C 500 ns diode reverse recovery time t rr i e = 50a, di e /dt = C100a/ m s C C 300 ns diode reverse recovery charge q rr i e = 50a, di e /dt = C100a/ m s C 0.5 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.31 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.70 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.033 c/w mitsubishi igbt modules CM50TF-28H medium power switching use insulated type
sep.2000 mitsubishi igbt modules CM50TF-28H medium power switching use insulated type collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 020406080 4 3 2 1 0 100 v ge = 15v t j = 25 c t j = 125 c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 60 20 0 v ge = 20v 15 12 13 11 8 7 t j = 25 o c 40 80 100 10 9 1.0 1.5 2.0 2.5 3.0 4.0 3.5 10 0 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 1 10 2 emitter current, i e , (amperes) t j = 25 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 20a i c = 100a i c = 50a gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 80 60 40 20 0 v ce = 10v t j = 25 c t j = 125 c 100 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 100 200 16 12 8 4 0 300 400 v cc = 800v v cc = 600v i c = 50a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -100a/ m sec t j = 25 c 10 1 10 0 10 -1 reverse recovery current, i rr , (amperes) collector current, i c , (amperes) switching time, (ns) half-bridge switching characteristics (typical) 10 4 10 0 10 1 10 2 10 3 10 1 10 0 10 2 t d(off) t d(on) t r v cc = 800v v ge = 15v r g = 6.3 w t j = 125 c t f collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -2 v ge = 0v 10 1 c ies c oes c res 10 -1
sep.2000 mitsubishi igbt modules CM50TF-28H medium power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) z th = r th ?(normalized value) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.7 c/w 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) z th = r th ?(normalized value) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.31 c/w 10 -1 10 -2 10 -3
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